2sd1781k transistors rev.a 1/3 medium power transistor (32v, 0.8a) 2sd1781k z features 1) very low v ce(sat) . v ce(sat) = 0.1v(typ.) d i c / i b = 500 # a / 50ma e 2) high current capacity in compact package. 3) complements the 2sb1197k. z structure epitaxial planar type npn silicon transistor z external dimensions (unit : mm) 0~0.1 2.8 0.2 1.6 0.3~0.6 1.1 0.8 0.1 0.15 0.4 2.9 0.2 1.9 0.2 0.95 0.95 + 0.2 ? 0.1 ? 0.1 + 0.2 + 0.1 ? 0.06 + 0.1 ? 0.05 (2) (1) (3) (1) emitter (2) base (3) collector rohm : smt3 eiaj : sc-59 abbreviated symbol : af ? all terminals have same dimensions ? denotes h fe z z absolute maximum ratings (ta=25 q c) parameter v cbo v ceo v ebo p c tj tstg 40 v v v a (dc) mw c c 32 5 0.8 a (pulse) 1.5 ? i c i cp 200 150 ? 55 to + 150 symbol limits unit ? single pulse pw = 100ms collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature
2sd1781k transistors rev.a 2/3 z electrical characteristics (ta=25 q c) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. 40 32 5 ? ? 120 ? ? ? ? ? ? ? ? ? 0.1 150 15 ? ? ? 0.5 0.5 390 0.4 ? ? vi c = 50 a i c = 1ma i e = 50 a v cb = 20v v eb = 4v v ce = 3v, i c = 100ma i c /i b = 500ma/50ma v ce = 5v, i e = ? 50ma, f = 100mhz v cb = 10v, i e = 0a, f = 1mhz v v a a ? v mhz pf typ. max. unit conditions collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage output capacitance transition frequency z z packaging specifications and h fe package code t146 3000 taping basic ordering unit (pieces) qr h fe 2sd1781k type h fe values are classified as follows : item q h fe 120 to 270 r 180 to 390 z z electrical characteristic curves dc current gain : h collector current : i c (ma) fig.3 dc current gain vs. collector current 1 10 20 50 2 5 10 20 50 100 200 500 1000 fe 100 200 500 1000 v ce = 5v ta = 100 c 25 c ? 55 c c (ma) 1000 collector current : i c (ma) collector to emitter voltage : v ce (v) fig.2 grounded emitter output characteristics 0 400 0246810 300 200 100 i b = 0 a tc = 25 c 100 a 200 a 300 a 400 a 500 a 600 a 700 a 800 a 800 a 900 a 1ma 1ma collector current : i base to emitter voltage : v be (v) fig.1 grounded emitter propagation characteristics 0.1 200 500 100 20 50 10 2 5 1 0.2 0.5 0.2 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ta = 25 c v ce = 6v
2sd1781k transistors rev.a 3/3 collector saturation voltage : v ce(sat) (mv) collector current : i c (ma) fig.4 collector-emitter saturation voltage vs. collector current ( ) 12 5102050 100 200 500 1000 5 10 20 50 100 200 500 1000 ta = 25 c i c /i b = 50 20 10 collector saturation voltage : v ce(sat) (mv) collector current : i c (ma) fig.5 collector-emitter saturation voltage vs. collector current ( ) 12 5102050 100 200 500 1000 5 10 20 50 100 200 500 1000 l c /l b = 10 25 c ? 55 c ta = 100 c emitter current : i e (ma) transition frequency : f t (mhz) fig.6 gain bandwidth product vs. emitter current ? 1 1000 200 500 20 50 100 10 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ? 200 ta = 25 c v ce = 5v collector output capacitance : cob ( pf) collector to base voltage : v cb (v) fig.7 collector output capacitance vs. collector-base voltage 0.1 100 20 50 10 5 0.2 0.5 1.0 2.0 5.0 10 20 50 ta = 25 c f = 1mhz i e = 0a emitter input capacitance : cib (pf) emitter to base voltage : v eb (v) fig.8 emitter input capacitance vs. emitter-base voltage 200 0.1 10 100 20 50 10 5 0.2 0.5 1.0 2.0 5.0 ta = 25 c f = 1mhz i c = 0a
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm c o.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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